N-channel trench MOSFETs eases thermal administration for wearables


With their low on-resistance, Nexperia’s 12-V and 30-V N-channel trench MOSFETs reduce power losses and enhance effectivity. The 30-V PMCB60XN and PMCB60XNE are available ultra-compact wafer-level DSN1006 (SOT8026) packages, whereas the 12-V PMCA14UN is housed in a DSN1010 (SOT8007) bundle.

Nexperia reviews that the MOSFETs’ RDS(on) is as much as 25% higher than competing gadgets. Simplified thermal administration and tiny packaging make the elements well-suited for miniaturized shopper electronics, corresponding to smartphones, sensible watches, listening to aids, and earphones. And the elements’ lowered self-heating enhances person consolation in wearable gadgets.

The 30-V PMCB60XN and PMCB60XNE have a most RDS(on) of fifty mΩ and 55 mΩ, respectively, at a VGS of 4.5 V. Based on Nexperia, this provides them the bottom on-resistance per die space in comparison with related 30-V MOSFETs. Each MOSFETs are rated for drain present as much as 4 A. As well as, the PMCB60XNE packs 2-kV ESD safety into its 1.0×0.6×0.2-mm bundle.

The 12-V PMCA14UN gives a most RDS(on) of 16 mΩ at a VGS of 4.5 V. Bundle dimensions of this high-efficiency system are simply 0.96×0.96×0.24 mm.

Now in manufacturing, the PMCB60XN, PMCB60XNE, and PMCA14UN MOSFETs will be bought straight from Nexperia or from its distributor Farnell.

PMCB60XN product web page

PMCB60XNE product web page

PMCA14UN product web page


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